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AS1185F/MIL

Low Dropout Regulator

AUSTIN

Austin Semiconductor

AS1185F/SPACE

LowDropoutRegulator

AUSTIN

Austin Semiconductor

AS1185F/XT

LowDropoutRegulator

AUSTIN

Austin Semiconductor

B1185

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

B1185

PowerTransistor(-60V,-3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

CEB1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1185

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1185

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1185

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CLV1185A

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

CLV1185A

VOLTAGECONTROLLEDOSCILLATOR

ZCOMM

Z-Communications, Inc

CLV1185A

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

CXD1185CQ

SCSI1ProtocolController

Description TheCXD1185CisahighperformanceCMOSSCSIcontrollerLSIthatconformstoANSIX3.131-1986standards.TheCXD1185Ciscapableofoperatinginbothinitiatorandtargetmodes.ItsatisfiesallstandardSCSIbusfeatures,suchasarbitration,selectionandparitygeneration/checkfu

SonySony Corporation

索尼

CXD1185CR

SCSI1ProtocolController

Description TheCXD1185CisahighperformanceCMOSSCSIcontrollerLSIthatconformstoANSIX3.131-1986standards.TheCXD1185Ciscapableofoperatinginbothinitiatorandtargetmodes.ItsatisfiesallstandardSCSIbusfeatures,suchasarbitration,selectionandparitygeneration/checkfu

SonySony Corporation

索尼

ECQE1185

PlasticFilmCapacitors

MetallizedPolyesterFilmCapacitor Non-inductiveconstructionusingmetallizedPolyesterfilmwithflameretardantepoxyresincoating ■Features ?Self-healingproperty ?Excellentelectricalcharacteristics ?Flameretardantepoxyresincoating ?RoHSdirectivecompliant ■RecommendedAp

PanasonicPanasonic Semiconductor

松下松下電器

ECQE1185

MetallizedPolyesterFilmCapacitor

PanasonicPanasonic Semiconductor

松下松下電器

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3000
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更多AS1185F/MIL供應(yīng)商 更新時間2024-12-29 10:50:00