零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ARF521 | N-CHANNEL ENHANCEMENT MODE POWER MOSFETs | ADPOW Advanced Power Technology | ADPOW | |
ARF521 | RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
250-3000MHzMMICAmplifier | ASB Advanced Semiconductor Business Inc. | ASB | ||
250~3000MHzMMICAmplifier | ASB Advanced Semiconductor Business Inc. | ASB | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
HIGHVOLTAGESWITCHINGDIODE Features ?FastSwitchingSpeed:max.50ns ?HighReverseBreakdownVoltage:300V ?LowLeakageCurrent:100nAatroomtemperature ?UltraSmallPlasticSMDPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) | DIODES Diodes Incorporated | DIODES | ||
Highvoltageswitchingdiode Generaldescription Singlehigh-voltageswitchingdiode,fabricatedinplanartechnology,andencapsulatedinaSOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Highswitchingspeed:trr≤50ns ■Highreversevoltage:VR≤300V ■Repetitivepe | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
Highvoltageswitchingdiode DESCRIPTION TheBAS521isahigh-voltageswitchingdiodefabricatedinplanartechnologyandencapsulatedinanultrasmallSOD523(SC-79)plasticSMDpackage. FEATURES ?Highswitchingspeed:max.50ns ?Highcontinuousreversevoltage:300V ?Repetitivepeakforwardcurrent:625mA ?Ult | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
SwitchingDiodes ■Features ●Highswitchingspeed:trr≤50ns ●Highreversevoltage:VR≤300V ●Repetitivepeakforwardcurrent:IFRM≤1A ●High-speedswitching ●High-voltageswitching | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
HIGHVOLTAGESWITCHINGDIODE HIGHVOLTAGESWITCHINGDIODE HighSpeedandHighVoltageSwitchingDiode | CDIL Continental Device India Limited | CDIL | ||
Highvoltageswitchingdiode DESCRIPTION TheBAS521isahigh-voltageswitchingdiodefabricatedinplanartechnologyandencapsulatedinanultrasmallSOD523(SC-79)plasticSMDpackage. FEATURES ?Highswitchingspeed:max.50ns ?Highcontinuousreversevoltage:300V ?Repetitivepeakforwardcurrent:625mA ?Ult | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
HIGHVOLTAGESWITCHINGDIODE | RECTRON Rectron Semiconductor | RECTRON | ||
Schottkybarrierdiode Features *Fastswitchingspeed *Highconductance | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
Singlehigh-voltageswitchingdiode 1.Generaldescription Singlehigh-voltageswitchingdiode,fabricatedinplanartechnology,andencapsulatedina SOD523(SC-79)ultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Highreversevoltage:VR≤300V ?Repe | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
High-voltageswitchingdiode 1.Generaldescription High-voltageswitchingdiode,inanultrasmallSOD523(SC-72)flatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Lowleakagecurrent:IR≤100nA ?Highreversevoltage:VR≤200V ?Lowcapacitanc | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
SMDSwitchingDiodes | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
HIGHVOLTAGESWITCHINGDIODE | DIODES Diodes Incorporated | DIODES | ||
HIGHVOLTAGESWITCHINGDIODE Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325V ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250VatRoomTemperature ?UltraSmallPlasticSMDPackage:1.0mmx0.6mmx0.5mm ?TotallyLead-Free&FullyRoHS | DIODES Diodes Incorporated | DIODES | ||
HIGHVOLTAGESWITCHINGDIODE Features ?FastSwitchingSpeed:max.50ns ?HighReverseBreakdownVoltage:300V ?LowLeakageCurrent:100nAatroomtemperature ?UltraSmallPlasticSMDPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qualifiedto | DIODES Diodes Incorporated | DIODES | ||
High-voltageswitchingdiode 1.Generaldescription High-voltageswitchingdiode,encapsulatedinanultrasmallSOD523(SC-79)flatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Highreversevoltage:VR≤300V ?Repetitivepeakforwardcurrent:IFR | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA |
詳細參數(shù)
- 型號:
ARF521
- 制造商:
Microsemi Corporation
- 功能描述:
RF MOSFET(VDMOS) - Bulk
- 功能描述:
RF PWR MOSFET 500V 10A DIE
- 功能描述:
RF POWER TRANSISTOR MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
APT |
24+ |
125 |
現(xiàn)貨供應 |
詢價 | |||
ADPOW |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
Microsemi Corporation |
22+ |
M174 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Microsemi Corporation |
21+ |
M174 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Microsemi Corporation |
23+ |
M174 |
9000 |
原裝正品,支持實單 |
詢價 | ||
POSEICO/意大利 |
2022+ |
1348A/1600V |
500 |
長期供應,價格優(yōu)勢,全新原裝,支持實單, |
詢價 | ||
POSEICO |
23+ |
標準封裝 |
5000 |
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保 |
詢價 | ||
POSEICO |
23+ |
8200 |
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | |||
Ohmite |
2010+ |
N/A |
23 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
OHMITE |
20+ |
電阻器 |
93 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
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