首頁 >AQV410EAZ>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

AQV410EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW410EHA

PhotoMOSRelayDimensions

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    AQV410EAZ

  • 制造商：

    Panasonic Electric Works

供應(yīng)商型號品牌批號封裝庫存備注價格
NAIS
2011+
DIPSOP6
20000
原裝現(xiàn)貨
 詢價
NAIS
23+
SOP6
14330
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
松下panasonic
24+
全新原裝
6180
詢價
NAIS
06+
DIP6
2000
詢價
PANASONIC
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
panasoni
專業(yè)光耦
DIPSOP6
65800
光耦原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
Panasonic
2022+
1
全新原裝 貨期兩周
 詢價
NAIS松下
24+
DIP-6
100000
原裝正品現(xiàn)貨
 詢價
PANASONIC(松下)
2032+
DIP-6
2579
向鴻優(yōu)勢庫存,貨在倉庫要貨請確認(rèn)
 詢價
Panasonic
2010+
N/A
66
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
更多AQV410EAZ供應(yīng)商 更新時間2020-4-2 17:49:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多