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APT29F100L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT29F100L

1000V, 29A, 0.46廓 Max, trr ??70ns N-Channel FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT29F100L

N-Channel FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

AM29F100

1Megabit(128Kx8-bit/64Kx16-bit)CMOS5.0Volt-only,BootSectorFlashMemory

GENERALDESCRIPTION TheAm29F100isa1Mbit,5.0Volt-onlyFlashmemoryorganizedas131,072bytesor65,536words.TheAm29F100isofferedin44-pinSOand48-pinTSOPpackages.Word-widedataappearsonDQ0-DQ15;byte-widedataonDQ0-DQ7.Thedeviceisdesignedtobeprogrammedin-systemwith

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

M29F100

1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F100B

1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F100BT

1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29F100Bisa1Mbit(128Kbx8or64Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M29F100T

1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

MX29F100T

1M-BIT[128Kx8/64Kx16]CMOSFLASHMEMORY

GENERALDESCRIPTION TheMX29F100T/Bisa1-megabitFlashmemoryorganizedas131,072bytesor65,536words.MXICsFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheMX29F100T/Bispackagedin44-pinSOPand48-pinTSOP.Itisdesignedtob

MCNIXMacronix International

????????????旺宏????????????旺宏電子

詳細(xì)參數(shù)

  • 型號(hào):

    APT29F100L

  • 功能描述:

    MOSFET N-CH 1000V 30A TO264

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

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更多APT29F100L供應(yīng)商 更新時(shí)間2024-11-15 17:42:00