首頁 >APT1201R6BVFRG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelay | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelay | ADPOW Advanced Power Technology | ADPOW |
詳細參數(shù)
- 型號:
APT1201R6BVFRG
- 功能描述:
MOSFET N-CH 1200V 8A TO-247
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
POWER MOS V®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MICROCHIP(美國微芯) |
23+ |
TO-247 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
APTMICROSEMI |
22+ |
TO-247B |
6000 |
十年配單,只做原裝 |
詢價 | ||
Microchip |
21+ |
15000 |
只做原裝 |
詢價 | |||
APT |
23+ |
TO-247B |
6000 |
原裝正品,支持實單 |
詢價 | ||
MICROCHIP |
22+ |
TO-247 |
10000 |
公司只有原裝 |
詢價 | ||
MICROCHIP |
23+ |
TO-247 |
495 |
正規(guī)渠道,只有原裝! |
詢價 | ||
MICROCHIP |
2022+ |
SOP16 |
6000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
microchip |
23+ |
15420 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價 | |||
MICROCHIP |
23+ |
TO-247 |
10000 |
公司只做原裝,可來電咨詢 |
詢價 | ||
MICROCHIP |
22+ |
TO-247 |
10000 |
公司只有原裝 |
詢價 |
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