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AP9952GP-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP9952GP-HF_14

Simple Drive Requirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AUIRF9952Q

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952Q

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRF9952QTR

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

AUIRF9952QTR

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80m?@VGS=10V. RDS(ON)=110m?@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100m?@VGS=-10V. RDS(ON)=150m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOchenmko

力勤股份有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952TRPBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

KDS9952A

DualN&P-ChannelEnhancementModeFieldEffectTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KRF9952

HEXFETPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

L9952GXP

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

L9952GXP

PowermanagementsystemIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

L9952GXP

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

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更多AP9952GP-HF供應(yīng)商 更新時(shí)間2024-11-8 15:36:00