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BAV302

SwitchingDiode

Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh

Good-Ark

GOOD-ARK Electronics

BAV302

SURFACEMOUNTFASTSWITCHINGDIODE

Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BAV302

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV302-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB302C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC302

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    AOW302-R

  • 制造商：

    IDEC Corporation

  • 功能描述：

    Switch Push Button N.C. DPST Mushroom Button 10A 440VAC 220VDC 745.7VA Maintained Contact Contact Block Panel Mount

  • 制造商：

    IDEC CORPORATION

  • 功能描述：

    Switch Push Button N.C. DPST Mushroom Button 10A 440VAC 220VDC 745.7VA Maintained Contact Screw Panel Mount

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就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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更多AOW302-R供應(yīng)商 更新時(shí)間2025-4-27 14:25:00

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