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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
AOU414	文件：69.31 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體	AOSMD
AOU414	文件：352.84 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
AOU4144	文件：960.85 Kbytes Page：8 Pages	N-Channel 30-V (D-S) MOSFET FEATURES ?Halogen-free ?TrenchFET?GenIIIPowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?DC/DCConversion -SystemPower	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
AOU4144	文件：353.26 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
AOU414L	文件：69.31 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25	AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體	AOSMD
AQV414	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQV414	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQV414	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQV414A	文件：168.96 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQV414A	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQV414AX	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQV414AZ	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQV414E	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS

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詳細(xì)參數(shù)

型號(hào)：
AOU414
制造商：
AOSMD
制造商全稱：
Alpha & Omega Semiconductors
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市卓越微芯電子有限公司	AOU414	AO	2020+	TO-251	4500	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳宇航軍工半導(dǎo)體有限公司	AOU414	AO	19+	TO-251	63520	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	AOU414	AO	22+	DIP-8	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市納艾斯科技有限公司	AOU414	A	2020+	TO-251	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
瀚佳科技(深圳)有限公司	AOU414	AO	24+	TO-251	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
深圳市永貝爾科技有限公司	AOU414	AOSMD	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費(fèi)送樣	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	AOU414	VBsemi/臺(tái)灣微碧	21+	TO-251	7100	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	AOU414	A	23+	TO-251	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	AOU414	AOS/萬(wàn)代	23+	TO-251	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	AOU414	A	22+	TO-251	6000	十年配單,只做原裝	詢價(jià)

更多AOU414供應(yīng)商更新時(shí)間2024-12-29 14:08:00

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