| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AOT42S60L | 600V 37A a MOS GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | |
AOT42S60L | 600V 37A a MOS TM Power Transistor GeneralDescription TheAOT42S60L&AOB42S60Lhavebeenfabricated usingtheadvancedaMOSTMhighvoltageprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinswitchingapplications. ByprovidinglowRDS(on),Qg andEOSSalongwith guaranteedavalanchecapabilit | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | |
600V37AaMOSPowerTransistor GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=37A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=109mΩ(Max) ?100avalanchetested ?Minimum | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V37AaMOSTMPowerTransistor GeneralDescription TheAOT42S60L&AOB42S60Lhavebeenfabricated usingtheadvancedaMOSTMhighvoltageprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinswitchingapplications. ByprovidinglowRDS(on),Qg andEOSSalongwith guaranteedavalanchecapabilit | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
600V37AaMOS GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
600V39AaMOSPowerTransistor GeneralDescription TheAOK42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythisdevicecanbe | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=39A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.099Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC) | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=39A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) ?100avalanchetested ?Minimum | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V39AaMOS GeneralDescription TheAOK42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythisdevicecanbe | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
600V37AaMOSPowerTransistor GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
600V42AaMOSTMPowerTransistor Thisreportappliesfor600V42AαMOSTMPowerTransistorAOTF42S60. AOTF42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguara | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=39A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) ?100avalanchetested ?Minimum | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=39A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) ?100avalanchetested ?Minimum | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào)：
AOT42S60L
- 功能描述：
MOSFET N-CH 600V 39A TO220
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
aMOS™
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點(diǎn)：
邏輯電平門(mén)
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時(shí)的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AOS |
24+ |
TO-220 |
333888 |
只做原裝AOS現(xiàn)貨直銷 |
詢價(jià) | ||
AOS |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
ALPHA萬(wàn)代 |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
AOS |
22+23+ |
TO-220 |
27934 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ALPHA萬(wàn)代 |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
AOS |
23+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
AOS/萬(wàn)代 |
21+ |
TO-220 |
30000 |
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅 |
詢價(jià) | ||
AOS |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
AOS/萬(wàn)代 |
23+ |
TO220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
AOS/萬(wàn)代 |
23+ |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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