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AON5800中文資料萬國半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AON5800
廠商型號

AON5800

功能描述

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件大小

132.4 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Alpha & Omega Semiconductors
企業(yè)簡稱

AOSMD萬國半導(dǎo)體

中文名稱

美國萬國半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-27 22:58:00

AON5800規(guī)格書詳情

General Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5800 is Pb-free (meets ROHS & Sony 259 specifications). AON5800L is a Green Product ordering option. AON5800 and AON5800L are electrically identical.

Features

VDS (V) = 20V

ID = 8 A (VGS = 10V)

RDS(ON) < 16 mΩ (VGS = 10V)

RDS(ON) < 20 mΩ (VGS = 4.5V)

RDS(ON) < 21 m? (VGS = 4.0V)

RDS(ON) < 22 m? (VGS = 3.1V)

RDS(ON) < 27 mΩ (VGS = 2.5V)

RDS(ON) < 45 mΩ (VGS = 1.8V)

ESD Rating: 2000V HBM

產(chǎn)品屬性

  • 型號:

    AON5800

  • 制造商:

    AOSMD

  • 制造商全稱:

    Alpha & Omega Semiconductors

  • 功能描述:

    Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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