零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AOI11S60 | 600V 11A a MOS Power Transistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | |
AOI11S60 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
DFN8X8PACKAGEMARKINGSDESCRIPTION | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
DFN8X8PACKAGEMARKINGSDESCRIPTION | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V11AaMOSTMPowerTransistor GeneralDescription TheAOW11S60&AOWF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) ?100avalanchetested ?MinimumLot-to | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V11AaMOSTMPowerTransistor GeneralDescription TheAOW11S60&AOWF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI |
詳細參數(shù)
- 型號:
AOI11S60
- 功能描述:
MOSFET N-CH 600V 11A TO251A
- RoHS:
是
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
aMOS™
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ALPHA |
TO-251A |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
AOS |
2020+ |
TO-251 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
AOS/萬代 |
21+ |
TO-251 |
6000 |
原裝正品 |
詢價 | ||
AOS/萬代 |
2021+ |
TO-251 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
AOS/萬代 |
24+ |
TO-251A |
333888 |
專業(yè)直銷原裝AOS一系列可訂貨 |
詢價 | ||
AOS |
17+ |
TO-251 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
AOS |
24+ |
TO-251A |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
AOS |
24+ |
TO-251 |
65300 |
一級代理/放心購買! |
詢價 | ||
AOS/萬代 |
23+ |
TO-251A |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ALPHA |
22+ |
TO-251A |
20000 |
保證原裝正品,假一陪十 |
詢價 |
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