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AO6601-HF

Complementary Trench MOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

ANADIGICS

ANADIGICS, Inc

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6601

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEM6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6601

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEU6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM6601JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

CJL6601

P-channelandN-channelComplementaryMOSFETS

ZPSEMI

ZP Semiconductor

供應(yīng)商型號品牌批號封裝庫存備注價格
AOS/萬代
21+
SOT-23
30000
萬代優(yōu)勢分銷 實單必成 可開增值稅13點
 詢價
AOS/萬代
22+
TSOP-6
180000
原裝進口現(xiàn)貨支持實單
 詢價
AOS/萬代
2023+
TSOP-6
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
AO
24+
SOT23-6
5000
只做原裝公司現(xiàn)貨
 詢價
原裝AOS
19+
SOT23-6
20000
詢價
AOS/萬代
1942+
SOT23-6
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價
ALPHA
2023+
SMD
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
原裝AOS
21+
SOT23-6
35200
一級代理/放心采購
 詢價
AOS
24+
TSOP6
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
AOSMD
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
更多AO6601-HF供應(yīng)商 更新時間2024-11-18 14:04:00

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