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AOD403

P-Channel30V(D-S)MOSFET

FEATURES ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

AOD403

-30VP-ChannelMOSFET

Features VDS(V)=-30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

AOD403

-30VP-ChannelMOSFET

GeneralDescription TheAOD403usesadvancedtrenchtechnologytoprovideexcellent RDS(ON),lowgatechargeandlowgateresistance.Withtheexcellent thermalresistanceoftheTO-252package,thisdeviceiswellsuited forhighcurrentloadapplications. Features VDS(V)=-30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

AOD403L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD403isPb-free(meets

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOI403

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

AOI403

30VP-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOI403

30VP-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOU403

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU403usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU403isPb-free(meetsROHS&Sony259specifications).AOU4

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOU403

P-Channel40V(D-S)MOSFET

FEATURES ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

AOU403

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=115mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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