| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AN-5020 | LVDS Reduces EMI | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc | ADPOW Advanced Power Technology | ADPOW | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO |
詳細參數(shù)
- 型號：
AN-5020
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
LVDS Reduces EMI
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PANASONI |
24+ |
SIP |
2650 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價 | ||
PANASONIC/松下 |
195 |
詢價 | |||||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
24+ |
11 |
詢價 | |||||
PANASANT |
2339+ |
SIP |
5650 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
PANASANT |
24+ |
SIP |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
Panasonic |
20+ |
SIP |
36500 |
原裝現(xiàn)貨/放心購買 |
詢價 | ||
Panasonic |
23+ |
SIP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
Panasonic |
23+ |
SIP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
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