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BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310WSLASHXR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310WSLASHXR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability Applications ?IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata ?Cascadable50?-gainblock ?9dBtypicalgainat1.0GHz ?9dBmtypicalP-1dBat1.0GHz ?3dB-bandwidth:DCto2.4GHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    AM310-370D1079

  • 制造商：

    Anatech Electronics Inc.

  • 類別：

    RF/IF，射頻/中頻和 RFID > 射頻多路復(fù)用器

  • 包裝：

    盒

  • 類型：

    雙工器

  • 頻帶（低/高）：

    300MHz ~ 320MHz / 360MHz ~ 380MHz

  • 回波損耗（低頻帶/高頻帶）：

    15.0dB / 15.0dB

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    18-SMD 模塊

  • 描述：

    310/370 MHZ CERAMIC DUPLEXER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
AMD
24+
DIP-24
15
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AMD
22+
CDIP
8200
全新原裝現(xiàn)貨!自家?guī)齑?
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炬力
2020+
2015+PB
4900
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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AM
21+
QFN
12588
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AM
1948+
QFN16
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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AM
24+
QFN
66800
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！
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炬力
2020+
QFN
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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AM
23+
QFN
15000
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AM
21+
QFN
10000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
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炬力
23+
2015PBF
50000
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更多AM310供應(yīng)商 更新時(shí)間2025-4-13 16:30:00

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