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AM29LV008BB-120EEB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

AM29LV008BB-120EEB
廠商型號(hào)

AM29LV008BB-120EEB

功能描述

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件大小

492.66 Kbytes

頁(yè)面數(shù)量

38 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-18 18:34:00

AM29LV008BB-120EEB規(guī)格書詳情

GENERAL DESCRIPTION

The Am29LV008B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ Manufactured on 0.32 μm process technology

— Compatible with 0.5 μm Am29LV008 device

■ High performance

— Full voltage range: access times as fast as 90 ns

— Regulated voltage range: access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent any program or erase operations within that sector

Sectors can be locked in-system or via programming equipment

Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 40-pin TSOP

■ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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