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AM28F256A-120EE中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AM28F256A-120EE
廠商型號

AM28F256A-120EE

功能描述

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

文件大小

456.67 Kbytes

頁面數(shù)量

35

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡稱

AMD超威半導(dǎo)體

中文名稱

美國超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-19 22:30:00

AM28F256A-120EE規(guī)格書詳情

GENERAL DESCRIPTION

The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F256A is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— Access times as fast as 70 ns

■ CMOS low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5

■ Latch-up protected to 100 mA from –1 V to VCC +1 V

■ Embedded Erase Electrical Bulk Chip-Erase

— 1.5 seconds typical chip-erase including

pre-programming

■ Embedded Program

— 14 μs typical byte-program including time-out

— 0.5 second typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Embedded algorithms for completely

self-timed write/erase operations

產(chǎn)品屬性

  • 型號:

    AM28F256A-120EE

  • 制造商:

    AMD

  • 制造商全稱:

    Advanced Micro Devices

  • 功能描述:

    256 Kilobit(32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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