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AM2300

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ?Fastswitch ?1.8VLowgatedriveapplications ?Highpowerandcurrenthandlingcapabi

AITSEMIAiT Semiconductor Inc.

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AM2300E3R

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ?Fastswitch ?1.8VLowgatedriveapplications ?Highpowerandcurrenthandlingcapabi

AITSEMIAiT Semiconductor Inc.

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AM2300E3SR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ?Fastswitch ?1.8VLowgatedriveapplications ?Highpowerandcurrenthandlingcapabi

AITSEMIAiT Semiconductor Inc.

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AM2300E3SVR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ?Fastswitch ?1.8VLowgatedriveapplications ?Highpowerandcurrenthandlingcapabi

AITSEMIAiT Semiconductor Inc.

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AM2300E3VR

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS=20V VGS=±12V ID(A)=5A RDS(ON)=22mΩ(typ.)@VGS=4.5V RDS(ON)=25mΩ(typ.)@VGS=2.5V RDS(ON)=30mΩ(typ.)@VGS=1.8V AM2300isavailableinSOT-23andSOT-23Spackages. FEATURES ?Fastswitch ?1.8VLowgatedriveapplications ?Highpowerandcurrenthandlingcapabi

AITSEMIAiT Semiconductor Inc.

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AM2300N

N-Channel 20-V (D-S) MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.TypicalapplicationsareDC-DCconverters,powermanagementinportableandbattery-poweredproducts

AnalogPower

Analog Power

AM2301

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)..lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchorothergenera

AITSEMIAiT Semiconductor Inc.

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AM2301A

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES ?VDS=-20V ?RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ ?RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ ?AvailableinSOT-23SPackage APPLICATION ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUltraLowOn-Resistance

AITSEMIAiT Semiconductor Inc.

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AM2301AE3SR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES ?VDS=-20V ?RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ ?RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ ?AvailableinSOT-23SPackage APPLICATION ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUltraLowOn-Resistance

AITSEMIAiT Semiconductor Inc.

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AM2301AE3SVR

MOSFET -20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES ?VDS=-20V ?RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ ?RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ ?AvailableinSOT-23SPackage APPLICATION ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUltraLowOn-Resistance

AITSEMIAiT Semiconductor Inc.

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供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AIT
2015+
SOT23-3
29898
專(zhuān)業(yè)代理MOS管,型號(hào)齊全,公司優(yōu)勢(shì)產(chǎn)品
詢(xún)價(jià)
VBsemi
24+
SOT-23
5000
只做原裝公司現(xiàn)貨
詢(xún)價(jià)
ANALOGPOW
1742+
SOT23-3
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
詢(xún)價(jià)
AIT-IC
23+
SOT-23
63000
原裝正品現(xiàn)貨
詢(xún)價(jià)
AIT-IC
24+
SOT23-3
36000
原裝現(xiàn)貨
詢(xún)價(jià)
AIT-IC
24+
SOT-23
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢(xún)價(jià)
AIT-
23+
NA/
6250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
詢(xún)價(jià)
AIT-IC
22+
SOT-23
25000
只有原裝原裝,支持BOM配單
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AIT-IC
23+
SOT-23
50000
原裝正品 支持實(shí)單
詢(xún)價(jià)
AIT-IC
24+
SOT-23
880000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
更多AM23供應(yīng)商 更新時(shí)間2025-3-18 15:04:00