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AM07N65

MOSFET 650V, 7A N-CHANNEL

FEATURE ?RoHSCompliant ?RDS(ON),typ.=1.2Ω@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION ?Adaptor ?Charger ?SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB07N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF07N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
TXC
23+
DIP
3000
全新、原裝
 詢價
OUT
24+
DIP14P
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
AMBIQMICR
1836+
QFN
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
AMBIQMICR
22+
QFN
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
AMBIQMICR
21+
QFN
80
原裝現(xiàn)貨假一賠十
 詢價
AMBIQ
20+
QFN-16
4854
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
AMBIQ/FUJITSU
24+
QFN
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
 詢價
AMBIQMICR
21+
QFN
16800
只做原裝,質(zhì)量保證
 詢價
Ambiq Micro Inc.
22+
16QFN
9000
原廠渠道,現(xiàn)貨配單
 詢價
Ambiq Micro Inc.
21+
16QFN
13880
公司只售原裝,支持實(shí)單
 詢價
更多AM07N65供應(yīng)商 更新時間2025-3-22 10:34:00

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