ALD1105SBL中文資料ADL數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Thermal tracking between N-channel and P-channel pairs

? Low threshold voltage of 0.7V for both N-channel &

P-channel MOSFETS

? Low input capacitance

? Low Vos -- 10mV

? High input impedance -- 1013Ω typical

? Low input and output leakage currents

? Negative current (IDS) temperature coefficient

? Enhancement mode (normally off)

? DC current gain 109

? Matched N-channel and matched P-channel in one package

? RoHS compliant

GENERAL DESCRIPTION

The ALD1105 is a monolithic dual N-channel and dual P-channel complementary

matched transistor pair intended for a broad range of analog

applications. These enhancement-mode transistors are manufactured

with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS

process. It consists of an ALD1116 N-channel MOSFET pair and an

ALD1117 P-channel MOSFET pair in one package. The ALD1105 is a low

drain current, low leakage current version of the ALD1103.

The ALD1105 offers high input impedance and negative current temperature

coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for precision signal

switching and amplifying applications in +2V to +10V systems where low

input bias current, low input capacitance and fast switching speed are

desired. Since these are MOSFET devices, they feature very large

(almost infinite) current gain in a low frequency, or near DC, operating

environment. When used in pairs, a dual CMOS analog switch can be

constructed. In addition, the ALD1105 is intended as a building block for

differential amplifier input stages, transmission gates, and multiplexer

applications.

The ALD1105 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 100pA at room temperature. For example, DC beta of the

device at a drain current of 3mA at 25°C is = 3mA/100pA = 300,000,000.

APPLICATIONS

? Precision current mirrors

? Complementary push-pull linear drives

? Analog switches

? Choppers

? Differential amplifier input stage

? Voltage comparator

? Data converters

? Sample and Hold

? Analog inverter

? Precision matched current sources