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AIMCQ120R040M1T

Marking：12A040M1；Package：PG-HDSOP-22-3；CoolSiC? Automotive MOSFET 1200 V in HDSOP-22-3 package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=61AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R040M1

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R040M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R040M1H

CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R040M1H

EiceDRIVER?1ED314xMU12F(1ED-X3Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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AIMDAC100
1
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PG-HDSOP-22
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Infineon
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4502
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SOP-8
8200
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AIM
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8215
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N/A
56000
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更多AIMCQ120R040M1T供應(yīng)商 更新時(shí)間2025-4-8 16:20:00

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