NL17SZ08DBVT1G

Marking：AH；Package：SC-74A；Single 2-Input AND Gate

TheNL17SZ08isasingle2?inputANDGateintinyfootprint packages. Features ?Designedfor1.65Vto5.5VVCCOperation ?2.7nstPDatVCC=5V(typ) ?Inputs/OutputsOvervoltageTolerantupto5.5V ?IOFFSupportsPartialPowerDownProtection ?Source/Sink24mAat3.0V ?Avail

NL27WZ02MU2TCG

Marking：AH；Package：UDFN8；Dual 2-Input NOR Gate

TheNL27WZ02isahighperformancedual2?inputNORGate operatingfroma1.65Vto5.5Vsupply. Features ?Designedfor1.65Vto5.5VVCCOperation ?2.5nstPDatVCC=5V(typ) ?Inputs/OutputsOvervoltageTolerantupto5.5V ?IOFFSupportsPartialPowerDownProtection ?Source/

NL27WZ08MU1TCG

Marking：AH；Package：UQFN8；Dual 2-Input AND Gate

TheNL27WZ08isahighperformancedual2?inputANDGate operatingfroma1.65Vto5.5Vsupply. Features ?Designedfor1.65Vto5.5VVCCOperation ?2.5nstPDatVCC=5V(typ) ?Inputs/OutputsOvervoltageTolerantupto5.5V ?IOFFSupportsPartialPowerDownProtection ?Source/

P6SMBJ6.5C

Marking：AH；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

PBSS303PD

Marking：AH；Package：SC-74；60 V, 3 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4330PA

Marking：AH；Package：DFN2020-3；30 V, 3 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinan ultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewith mediumpowercapability. PNPcomplement:PBSS5330PA. 2.Featuresandbenefits ?Lowcollector-emitter

PMEG2010EJ

Marking：AH；Package：SOD323F；1 A very low VF MEGA Schottky barrier rectifiers

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierswithan integratedguardringforstressprotection,encapsulatedinsmallSurface-Mounted Device(SMD)plasticpackages. 1.2Features nForwardcurrent:IF￡1A nReversevoltage:VR￡

PMEG3020DEP

Marking：AH；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤2A ?Reversevoltage:VR≤3

PMEG3020DEP-Q

Marking：AH；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD128smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤2A ?Reversevoltage:VR≤3

PTVS17VS1UR

Marking：AH；Package：SOD123W；400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto