AGR19180EF中文資料TriQuint數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Introduction

The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

CDMA Features

Typical two carrier CDMA performance:

VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,

f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97

CDMA pilot, sync, paging, traffic codes 8—13

(9 channels) 1.2288 MHz channel bandwidth (BW),

adjacent channel power ration (ACPR) measured

over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.

Distortion products measured over 1.2288 MHz

channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.

Peak/avg = 9.72 dB @ 0.01 probability on

CCDF:

— Output power: 38 W.

— Power gain: 14.5 dB.

— Efficiency: 26.

— IM3: –33 dBc.

— ACPR: –48.5 dBc

— Return loss: –12 dB.

Device Performance Features

High-reliability, gold-metalization process.

Hot carrier injection (HCI) induced bias drift of <5

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output

power pulsed 4 μs at 10 duty.

Large signal impedance parameters available.