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AG2612G

LED BACKLIGHT FOR LCD DISPLAY

LEDBACKLIGHTFORLCDDISPLAY

MICRO-ELECTRONICS

Micro Electronics

AM2612

AM261xSitara?Microcontrollers

1Features ProcessorCores: ?SingleandDualArm?Cortex?R5FCPUwitheach corerunningupto500MHz –16KBI-Cachewith64-bitECCperCPUcore –16KBD-cachewith32-bitECCperCPUcore –256KBTightlyCoupledMemory(TCM)per core,with32-bitECC –LocksteporDualcoreoperations

TITexas Instruments

德州儀器美國(guó)德州儀器公司

AM2612

AM261xSitara?Microcontrollers

1Features ProcessorCores: ?SingleandDualArm?Cortex?R5FCPUwitheach corerunningupto500MHz –16KBI-Cachewith64-bitECCperCPUcore –16KBD-cachewith32-bitECCperCPUcore –256KBTightlyCoupledMemory(TCM)per core,with32-bitECC –LocksteporDualcoreoperations

TITexas Instruments

德州儀器美國(guó)德州儀器公司

AN2612

Single5-VDCpowersupply

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AP2612GY-HF

Capableof1.8VGateDrive,SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

DEM2612C

Lowprofile(2.6x2.8mmsquare,1.2mmMax.height).

Toko

TOKO, Inc

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2612

Low-Voltage,LowRON,SPDTAudioSwitchwithNegativeSwingCapability

FEATURES ?Lowvoltageoperation(1.8Vto5.5V) ?Lowon-resistance-RON:1.0Ωat2.7V ?Highbandwidth BENEFITS ?Negativesignalswingcapability ?Shuntswitchtoeliminateswitchingnoise ?SimplifieddesignwithdirectDCcoupling ?SpacesavingSC-89package APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15μmgatepseudomorphichighelectronmobilitytransistor(0.15μmPHEMT)technology.Gatewidthis120μmandthe0.15μmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

UMS

United Monolithic Semiconductors

EC2612

40GHzSuperLowNoisepHEMT

UMS

United Monolithic Semiconductors

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?1.1

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?4.9A,2

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD2612

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD2612

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FTK2612AD

20VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

GKN2612

SiliconStandardRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

GKN2612

SiliconStandardRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

GKR2612

SiliconStandardRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    AG2612G

  • 制造商:

    MICRO-ELECTRONICS

  • 制造商全稱:

    Micro Electronics

  • 功能描述:

    LED BACKLIGHT FOR LCD DISPLAY

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更多AG2612G供應(yīng)商 更新時(shí)間2025-1-15 16:49:00