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AG2106J8VR中文資料創(chuàng)瑞科技數(shù)據(jù)手冊PDF規(guī)格書

AG2106J8VR
廠商型號

AG2106J8VR

功能描述

MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

文件大小

997.35 Kbytes

頁面數(shù)量

15

生產(chǎn)廠商 AiT Semiconductor Inc.
企業(yè)簡稱

AITSEMI創(chuàng)瑞科技

中文名稱

AiT創(chuàng)瑞科技官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-4 20:00:00

AG2106J8VR規(guī)格書詳情

DESCRIPTION

The AG2106 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

AG2106 is available in a SOP8 and DFN8(2x3) packages.

FEATURES

? Fully operational to +600 V

? 3.3V logic compatible

? dV/dt Immunity ±50V/nsec

? Floating channel designed for bootstrap operation

? Gate drive supply range from 10V to 20V

? UVLO for both channels

? Output Source / Sink Current Capability 400mA / 800mA

? Cross Conduction Protection with 180ns Internal Fixed Dead Time

? -5V negative Vs ability

? Matched propagation delay for both channels

? Available in a SOP8 and DFN8(2x3) packages.

APPLICATION

? Small and medium- power motor driver

? Power MOSFET or IGBT driver

? Lighting ballast

? Half?Bridge Power Converters

? Full-Bridge Power Converters

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