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AMA430N

N-Channel30-V(D-S)MOSFET

AnalogPower

Analog Power

AMR430N

N-Channel30-V(D-S)MOSFET

AnalogPower

Analog Power

AOB430

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOB430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430isPb-free(meetsROHS

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOB430

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=63mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOB430L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOB430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430isPb-free(meetsROHS

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOB430Y

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOB430YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430YisPbfree,insidean

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOB430YL

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOB430YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430YisPbfree,insidean

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOT430

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOT430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOT430isPb-free(meetsROHS&Sony259specifications). Fea

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOT430

N-Channel80V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?PrimarySideSwitching ?SynchronousRectification ?DC/ACInverters ?LEDBacklighting

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

AOT430

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=80A@TC=25℃ ?DrainSourceVoltage- :VDSS=75V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=11.5mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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2017+
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1585
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22+
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10000
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24+
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10000
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更多AFP-430供應(yīng)商 更新時(shí)間2025-2-14 17:08:00