ADM10N06S中文資料愛德微數(shù)據(jù)手冊PDF規(guī)格書
ADM10N06S規(guī)格書詳情
Features:
● Low Gate Charge for Fast Switching Application
● Low RDS(ON) to Minimize Conductive Loss
● 100% EAS Guaranteed
● Optimized V(BR)DSS Ruggedness
● Green Device Available
Description:
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ADI |
21+ |
8080 |
只做原裝,質(zhì)量保證 |
詢價 | |||
AnalogDevices |
SMD |
1000 |
AD代理旗下一級分銷商,主營AD全系列產(chǎn)品 |
詢價 | |||
TAIWAN |
22+ |
TO-223 |
8200 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
AD |
17+ |
LFCSP40 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ADI(亞德諾) |
6000 |
詢價 | |||||
TELEN |
23+ |
BGA |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ADI |
2020+ |
QFN |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ADI/亞德諾 |
22+ |
66900 |
原封裝 |
詢價 | |||
TELEN |
16+ |
BGA |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
AD |
24+ |
QFN |
2173 |
公司大量全新正品 隨時可以發(fā)貨 |
詢價 |