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AD8659ARZ-RL

22μA,RRIO,CMOS,18VOperationalAmplifiers

FEATURES Micropowerathighvoltage(18V):22μAmaximumLowoffsetvoltage:350μVmaximum Lowinputbiascurrent:20pAmaximumGainbandwidthproduct:230kHzatAV=100typical Unity-gaincrossover:230kHz?3dBclosed-loopbandwidth:305kHzSingle-supplyoperation:2.7Vto18VDual-s

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8659ARZ-RL

22muA,RRIO,CMOS,18VOperationalAmplifiers

GENERALDESCRIPTION TheAD8657/AD8659aredualandquadmicropower,precision,rail-to-railinput/outputamplifiersoptimizedforlowpowerandwideoperatingsupplyvoltagerangeapplications. TheAD8657/AD8659operatefrom2.7Vto18Vwithatypicalquiescentsupplycurrentof18μA.The

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ECH8659

General-PurposeSwitchingDeviceApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

ECH8659

PowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?4Vdrive ?Compositetype,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ECH8659

N-ChannelPowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?4Vdrive ?Compositetype,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ECH8659

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

Features ?4Vdrive ?Compositetype,facilitatinghigh-densitymounting ?Halogenfreecompliance ?Protectiondiodein

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

ECH8659-TL-H

PowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?4Vdrive ?Compositetype,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ECH8659-TL-H

N-ChannelPowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?4Vdrive ?Compositetype,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ECH8659-TL-W

PowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?4Vdrive ?Compositetype,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HT8659

VoiceRecorder(DRAM)

HoltekHolmate Technology Corp. (Holtek)

合泰合泰半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    AD8659ARZ_PROMO

  • 制造商：

    Analog Devices

  • 功能描述：

    OP AMP QUAD 18V RRIO 230KH

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ADI
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13880
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NA
33680
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35200
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12500
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9852
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更多AD8659ARZ_PROMO供應(yīng)商 更新時(shí)間2025-3-3 10:30:00

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