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ABR806

AVALANCHE BRIDGE RECTIFIERS

FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *ldealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC discrete Semiconductors

ABR806

AVALANCHE BRIDGE RECTIFIERS

FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *ldealforprintedcircuitboard

EIC

EIC discrete Semiconductors

AD806X-EB

Low-Cost,300MHzRail-to-RailAmplifiers

GENERALDESCRIPTION TheAD8061/AD8062/AD8063arerail-to-railoutputvoltagefeedbackamplifiersofferingeaseofuseandlowcost.Theyhaveabandwidthandslewratetypicallyfoundincurrentfeedbackamplifiers.Allhaveawideinputcommon-modevoltagerangeandoutputvoltageswing,makin

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADB806

8AMPSILICONBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

AOP806

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP806usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. StandardProductAOP806isPb-free(meetsROHS&Sony259specifications). Features VDS(V)=75V

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

ASRD806

SURFACEMOUNTSTEPRECOVERYDIODE

ASI

Advanced Semiconductor

ASRD806

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ASRD806D

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ASRD806D-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ASRD806T

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ASRD806-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ASRD806T-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?SurfaceMountSOD323Package

ASI

Advanced Semiconductor

ATTINY806

tinyAVR?0-series

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

BAQ806

AMPINdiode

DESCRIPTION DO-214ACsurfacemountablepackagewithglasspassivatedchip.Thewell-definedvoid-freecaseisofatransfer-mouldedthermo-settingplastic. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecurrent ?Excellentstability ?UL94V-O

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC806

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC806_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC806H

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?High-temperatureapplicationsupto175°C ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC806H_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?High-temperatureapplicationsupto175°C ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC806W

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC806W_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits ?Highcurrent ?Highvoltage ?Twocurrentgainselections ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    ABR806

  • 制造商：

    EIC

  • 制造商全稱：

    EIC discrete Semiconductors

  • 功能描述：

    AVALANCHE BRIDGE RECTIFIERS

供應(yīng)商型號品牌批號封裝庫存備注價格
EIC
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
6000
2023+
全新原裝庫存現(xiàn)貨部分訂貨
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
N/A
23+
80000
專注配單,只做原裝進口現(xiàn)貨
 詢價
N/A
23+
80000
專注配單,只做原裝進口現(xiàn)貨
 詢價
TI
24+
SMD
30
C32-端子
 詢價
PANDUIT
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
TI
24+
SMD
81
新
 詢價
ABRACON
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ABRACON
22+
N/A
183775
原裝原裝原裝
 詢價
Abracon LLC
22+
8CLCC (3.2x1.5)
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多ABR806供應(yīng)商 更新時間2024-12-24 17:55:00

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