零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFET500V,24A,0.19廓 Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFET500V,24A,0.2廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighVoltageN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司 | FOSTER | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-3PNpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
HiPerFETMOSFETsISOPLUS220 ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification | IXYS IXYS Corporation | IXYS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
N |
23+ |
TO-3P |
10000 |
公司只做原裝正品 |
詢價 | ||
N |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢價 | ||
N |
23+ |
TO-3P |
6000 |
原裝正品,支持實單 |
詢價 | ||
N |
22+ |
TO-3P |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
N |
24+ |
TO-3P |
37650 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
DIGI |
20+ |
射頻元件 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Hoffman |
2020+ |
N/A |
3 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Hoffman |
22+ |
NA |
3 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Hoffman |
新 |
12 |
全新原裝 貨期兩周 |
詢價 | |||
Hoffman |
2022+ |
8 |
全新原裝 貨期兩周 |
詢價 |
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