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8090S

OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR

FEATURES ■Quasi-ResonantOperation ■OutputPowerto120W ■Low-Loss,Pulse-Ratio-ControlStandbyMode ■Temperature-CompensatedPulse-by-PulseOver-CurrentProtection ■LatchedOver-VoltageandThermalProtection ■Under-VoltageLockoutwithHysteresis ■ActiveLow-PassFilterforEnhanc

ALLEGRO

Allegro MicroSystems

AN8090

OVERVOLTAGEPROTECTIVECIRCUIRSBUILT-INSWITCHINGPOWERSUPPLY

Overview TheAN8090andtheAN8090Senableshigh-speedcontrolupto500kHzandhavevariousprotectivefunctionsforover-current,overvoltage,andthermalprotectionnordertoimprovereliabilityofthepowersupply.

PanasonicPanasonic Semiconductor

松下松下電器

AN8090S

OVERVOLTAGEPROTECTIVECIRCUIRSBUILT-INSWITCHINGPOWERSUPPLY

Overview TheAN8090andtheAN8090Senableshigh-speedcontrolupto500kHzandhavevariousprotectivefunctionsforover-current,overvoltage,andthermalprotectionnordertoimprovereliabilityofthepowersupply.

PanasonicPanasonic Semiconductor

松下松下電器

AND8090

ACCharacteristicsofECLDevices

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AND8090D

3.3V/5VECL2-InputDifferentialXOR/XNOR

Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features ?250psTypicalPropagationDelay ?MaximumFrequency>3GHzTypical ?PECLModeOpera

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

AND8090D

ACCharacteristicsofECLDevices

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

APT8090AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8090BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT8090BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8090HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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5000
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KeystoneElectronics
新
624
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Keystone Electronics
2022+
620
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Keystone Electronics Corp
2023+
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8700
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Crouzet
22+
NA
53
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Honeywell
2020+
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8
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Honeywell(霍尼韋爾)
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7350
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ST
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