首頁 >74VHCT04ASJX_NL>規(guī)格書列表
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HEXINVERTER DESCRIPTION The74VHCT04Aisanadvancedhigh-speedCMOSHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichprovideshighnoiseimmunityandstableoutput. ■HIGHSPEED: | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
HEXINVERTER | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
HexInverter | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter HexInverter TheMC74VHCT04AisanadvancedhighspeedCMOSinverterfabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation. Theinternalcircuitiscomposedofthreestages,including | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter HexInverter TheMC74VHCT04AisanadvancedhighspeedCMOSinverterfabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation. Theinternalcircuitiscomposedofthreestages,including | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter HexInverter TheMC74VHCT04AisanadvancedhighspeedCMOSinverterfabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation. Theinternalcircuitiscomposedofthreestages,including | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HexInverter | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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