74AUP1G57GX集成電路（IC）的門反相器-多功能可配置規(guī)格書PDF中文資料

廠商型號	74AUP1G57GX
參數(shù)屬性	74AUP1G57GX 封裝/外殼為6-XFDFN；包裝為卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶；類別為集成電路（IC）的門反相器-多功能可配置；產(chǎn)品描述：IC GATE CONFIG MULTI-FUNC X2SON6
功能描述	Low-power configurable multiple function gate
絲印標識	aC
封裝外殼	SOT1255-2 / 6-XFDFN
文件大小	294.43 Kbytes
頁面數(shù)量	20 頁
生產(chǎn)廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-1-30 19:00:00

1. General description

The 74AUP1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device

can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter

and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. This device

ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to

3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

? Wide supply voltage range from 0.8 V to 3.6 V

? CMOS low power dissipation

? High noise immunity

? Overvoltage tolerant inputs to 3.6 V

? Low noise overshoot and undershoot < 10 of VCC

? IOFF circuitry provides partial power-down mode operation

? Latch-up performance exceeds 100 mA per JESD 78 Class II

? Low static power consumption; ICC = 0.9 μA (maximum)

? Complies with JEDEC standards:

? JESD8-12 (0.8 V to 1.3 V)

? JESD8-11 (0.9 V to 1.65 V)

? JESD8-7 (1.65 V to 1.95 V)

? JESD8-5 (2.3 V to 2.7 V)

? JESD8C (2.7 V to 3.6 V)

? ESD protection:

? HBM JESD22-A114F exceeds 5000 V

? MM JESD22-A115-A exceeds 200 V

? CDM JESD22-C101E exceeds 1000 V

? Multiple package options

? Specified from -40 °C to +85 °C and -40 °C to +125 °C