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71V65603S100PFGI

256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFGI

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFGI8

256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFGI8

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65603S100PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65603S100PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    71V65603S100PFGI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    卷帶（TR）

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲(chǔ)容量：

    9Mb（256K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商器件封裝：

    100-TQFP（14x20）

  • 描述：

    IC SRAM 9MBIT PARALLEL 100TQFP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS(瑞薩)/IDT
2022+原裝正品
TQFP-100(14x20)
18000
支持工廠BOM表配單 公司只做原裝正品貨
 詢價(jià)
IDT
22+
100TQFP
10000
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng)
 詢價(jià)
IDT, Integrated Device Technol
21+
100-TQFP(14x20)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
RENESAS(瑞薩)/IDT
2117+
TQFP-100(14x20)
315000
72個(gè)/托盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
 詢價(jià)
IDT
20+
QFP-100
144
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價(jià)
RENESAS(瑞薩)/IDT
2021+
TQFP-100(14x20)
499
詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IDT
22+
100TQFP
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
更多71V65603S100PFGI供應(yīng)商 更新時(shí)間2024-11-5 8:24:00

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