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首頁 >71V424S10PHGI>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
71V424S10PHGI	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S10PHGI	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10PHGI	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：44-TSOP（0.400"，10.16mm 寬）類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10PHGI8	文件：72.68 Kbytes Page：9 Pages	3.3V CMOS Static RAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S10PHGI8	文件：189.42 Kbytes Page：11 Pages	3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10PHGI8	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：44-TSOP（0.400"，10.16mm 寬）類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4MBIT PARALLEL 44TSOP II	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S10YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S10YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10YG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10YGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S10YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號(hào)：
71V424S10PHGI
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲(chǔ)器
包裝：
卷帶（TR）
存儲(chǔ)器類型：
易失
存儲(chǔ)器格式：
SRAM
技術(shù)：
SRAM - 異步
存儲(chǔ)容量：
4Mb（512K x 8）
存儲(chǔ)器接口：
并聯(lián)
寫周期時(shí)間 - 字，頁：
10ns
電壓 - 供電：
3V ~ 3.6V
工作溫度：
-40°C ~ 85°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
44-TSOP（0.400"，10.16mm 寬）
供應(yīng)商器件封裝：
44-TSOP II
描述：
IC SRAM 4MBIT PARALLEL 44TSOP II

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市鵬順微電子科技有限公司	71V424S10PHGI	RENESAS(瑞薩)/IDT	2022+原裝正品	TSOPII-44	18000	支持工廠BOM表配單公司只做原裝正品貨	詢價(jià)
深圳市弘為電子有限公司	71V424S10PHGI	IDT	16+	原廠封裝	2000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市維爾達(dá)電子有限公司	71V424S10PHGI	IDT	2023+	新	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市艾宇特電子科技有限公司	71V424S10PHGI	IDT	2046+		9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)
瀚佳科技(深圳)有限公司	71V424S10PHGI	IDT, Integrated Device Technol	21+	44-TSOP II	56200	一級(jí)代理/放心采購	詢價(jià)
深圳市艾宇欣科技有限公司	71V424S10PHGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
艾睿國際（香港）有限公司	71V424S10PHGI	RENESAS(瑞薩)/IDT	2117+	TSOPII-44	315000	135個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期	詢價(jià)
深圳市科雨電子有限公司	71V424S10PHGI	IDT	20+	TSOP-44	130	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市冠億通科技有限公司	71V424S10PHGI	Renesas	21+		25000	原廠原包深圳現(xiàn)貨主打品牌假一賠百可開票!	詢價(jià)
訊運(yùn)(深圳/上海)電子有限公司	71V424S10PHGI	RENESAS(瑞薩)/IDT	2021+	TSOPII-44	499		詢價(jià)

更多71V424S10PHGI供應(yīng)商更新時(shí)間2024-11-19 15:00:00

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