首頁 >70V3599S166BC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
70V3599S166BC | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
70V3599S166BC | 包裝:卷帶(TR) 封裝/外殼:256-LBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4.5MBIT PAR 256CABGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:托盤 封裝/外殼:256-LBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4.5MBIT PAR 256CABGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝:卷帶(TR) 封裝/外殼:256-LBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4.5MBIT PAR 256CABGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
70V3599S166BC
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 雙端口,同步
- 存儲容量:
4.5Mb(128K x 36)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
3.15V ~ 3.45V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
256-LBGA
- 供應(yīng)商器件封裝:
256-CABGA(17x17)
- 描述:
IC SRAM 4.5MBIT PAR 256CABGA
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
16+ |
7882 |
進(jìn)口原裝正品 |
詢價 | |||
IDT, Integrated Device Technol |
21+ |
165-LBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
256-CABGA(17x17) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
23+ |
NA |
7882 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
RENESAS(瑞薩)/IDT |
2117+ |
CABGA-256(17x17) |
315000 |
6個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
IDT |
20+ |
BGA-256 |
12 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
IDT |
2021+ |
7882 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 |
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