首頁 >70P256A999BYGI>規(guī)格書列表
零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
70P256A999BYGI | VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IDT |
BGA |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨 |
詢價(jià) | |||
IDT |
04+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IDT |
22+ |
BGA100 |
10000 |
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IDT |
23+ |
BGA |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
IDT |
22+ |
BGA |
18000 |
原裝現(xiàn)貨原盒原包.假一罰十 |
詢價(jià) | ||
IDT, Integrated Device Technol |
21+ |
168-VFBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營 |
詢價(jià) | ||
IDT, Integrated Device Technol |
24+ |
100-CABGA(6x6) |
56200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
IDT |
20+ |
BGA-100 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Renesas Electronics America In |
24+ |
100-TFBGA |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) |
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