| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|
6R1 | | SHIELDED SMT POWER INDUCTORS
●FEATURE
VarioushighpowerinductorareSuperior
tobehighsaturationforsurfacemounting
●APPLICATIONS
2DC/DCconverterpowersupply,
Telecommunicationequipment | PRODUCTWELL Productwell Precision Elect.CO.,LTD | PRODUCTWELL |
6R125P | | CoolMOS Power Transistor
Features
?Lowestfigure-of-meritRONxQg
?Ultralowgatecharge
?Extremedv/dtrated
?Highpeakcurrentcapability
?QualifiedaccordingtoJEDEC1)fortargetapplications
?Pb-freeleadplating;RoHScompliant
CoolMOSCPisspeciallydesignedfor:
?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R160P6 | | Metal Oxide Semiconductor Field Effect Transistor
Description
CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R165P | | CoolMOS Power Transistor
CoolMOS?PowerTransistor
Features
?Lowestfigure-of-meritRONxQg
?Ultralowgatecharge
?Extremedv/dtrated
?Highpeakcurrentcapability
?QualifiedaccordingtoJEDEC1)fortargetapplications
?Pb-freeleadplating;RoHScompliant
CoolMOSCPisspeciallydesignedfor:
?Hardswit | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R190C6 | | 600V CoolMOS C6 Power Transistor
Description
CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R190E6 | | 600V CoolMOS E6 Power Transistor
Description
CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?E6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R190P6 | | Metal Oxide Semiconductor Field Effect Transistor
Description
CoolMOS?isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R199P | | CoolMOS Power Transistor
Features
?Lowestfigure-of-meritRONxQg
?Ultralowgatecharge
?Extremedv/dtrated
?Highpeakcurrentcapability
?QualifiedaccordingtoJEDEC1)fortargetapplications
?Pb-freeleadplating;RoHScompliant
CoolMOSCPisspeciallydesignedfor:
?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R1MBI100P-160 | | Diode Module with Brake
Features
·CompactPackage
·P.C.BoardMountModule
·ConverterDiodeBridgeDynamicBrakeCircuit
Applications
·InverterforMotorDrive
·ACandDCServoDriveAmplifier
·UninterruptiblePowerSupply | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji |
6R1MBI100P-160 | | Diode Module with Brake (Diode:1600V / 100A, IGBT:1400A/75A)
Features
·CompactPackage
·P.C.BoardMountModule
·ConverterDiodeBridgeDynamicBrakeCircuit
Applications
·InverterforMotorDrive
·ACandDCServoDriveAmplifier
·UninterruptiblePowerSupply | | eupec |
6R1MBI75P-160 | | Diode Module with Brake
DiodeModulewithBrake
Diode:1600V/75A,IGBT:1400A/50A
Features
?CompactPackage
?P.C.BoardMountModule
?ConverterDiodeBridgeDynamicBrakeCircuit
Applications
?InverterforMotorDrive
?ACandDCServoDriveAmplifier
?UninterruptiblePowerSupply | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji |
6R1MBI75P-160 | | Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A
[FujiElectric]
Features
?CompactPackage
?P.C.BoardMountModule
?ConverterDiodeBridgeDynamicBrakeCircuit
Applications
?InverterforMotorDrive
?ACandDCServoDriveAmplifier
?UninterruptiblePowerSupply | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
6R1TI30Y-080 | | DIODE AND TYRISTOR MODULE
Features
?GlassPassivationChip
?EasyConnection
?InsulatedType
?Largedi/dt
?Largedv/dt
Applications
?DinamicbrakingofACMotors | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji |
6R100 | | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
6R1000 | | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 |
6R100AXB | | Reinforced Class R Fuse Holder 100 Amps, 600 Volts AC/DC | MARATHON Regal Beloit Corporation | MARATHON |
6R125P | | CoolMOSTM Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R125P6 | | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R190E6 | | 600V CoolMOS? E6 Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
6R190E6 | | 600V CoolMOS? E6 Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
