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PHB50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB50N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB50N03T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD50N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD50N03LTA

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHP50N03LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Verylowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance ?Logiclevel

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP50N03LT

N-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET?powerMOSFET ?Packagewithlowthermalresistance ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHP50N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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on
2024
TO-252
58209
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量
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12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
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24+
TO-251-3
8866
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進(jìn)口
23+
TO252
9280
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TI
24+
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5642
公司原廠(chǎng)原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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on
2020+
TO-252
28900
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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臺(tái)產(chǎn)
24+
原廠(chǎng)封裝
797
原裝現(xiàn)貨假一罰十
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AOS
24+
TO-252
5000
只做原裝公司現(xiàn)貨
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PHL
25+23+
TO263
73848
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
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MKO.ON.PHD.雷達(dá)
24+
TO252
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!
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更多50N03供應(yīng)商 更新時(shí)間2025-4-1 16:40:00

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