首頁(yè) >3N120>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

3N120

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

3N120-E3

3.0A, 1200V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC3N120-E3provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤7.0Ω@VGS=10V,ID=1.5A *LowReverseTransferCapacitance *FastSwitchingCa

UTCUnisonic Technologies

友順友順科技股份有限公司

3N120L-TA3-T

3.0A, 1200V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC3N120-E3provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤7.0Ω@VGS=10V,ID=1.5A *LowReverseTransferCapacitance *FastSwitchingCa

UTCUnisonic Technologies

友順友順科技股份有限公司

3N120L-TF1-T

3.0A, 1200V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC3N120-E3provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤7.0Ω@VGS=10V,ID=1.5A *LowReverseTransferCapacitance *FastSwitchingCa

UTCUnisonic Technologies

友順友順科技股份有限公司

3N120L-TQ2-R

3.0A, 1200V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC3N120-E3provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤7.0Ω@VGS=10V,ID=1.5A *LowReverseTransferCapacitance *FastSwitchingCa

UTCUnisonic Technologies

友順友順科技股份有限公司

3N120L-TQ2-T

3.0A, 1200V N-CHANNEL POWER MOSFET

?DESCRIPTION TheUTC3N120-E3provideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤7.0Ω@VGS=10V,ID=1.5A *LowReverseTransferCapacitance *FastSwitchingCa

UTCUnisonic Technologies

友順友順科技股份有限公司

HM3N120A

Powerswitchcircuitofadaptorandcharger

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM3N120F

Electricwelder,Inverter

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFA3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFA3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP3N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTA3N120HV

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTH3N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH3N120

HighVoltagePowerMOSFETs

IXYS

IXYS Corporation

IXTP3N120

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXTP3N120

HighVoltagePowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    3N120

  • 制造商:

    NJSEMI

  • 制造商全稱:

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述:

    NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MOTOROLA
16+
CAN4
1200
原裝現(xiàn)貨假一罰十
詢價(jià)
MOTO/ON
23+
TO-220
3000
全新原裝
詢價(jià)
MOT
2339+
CAN4
8985
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
ON/安森美
專業(yè)鐵帽
TO-220
1200
原裝鐵帽專營(yíng),代理渠道量大可訂貨
詢價(jià)
MOT
09+
TO-220
6000
絕對(duì)原裝自己現(xiàn)貨
詢價(jià)
ON/安森美
20+
TO-220
67500
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢價(jià)
MOT
24+
CAN4
6540
原裝現(xiàn)貨/歡迎來(lái)電咨詢
詢價(jià)
23+
TO220
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳
詢價(jià)
ON
2023+
TO-220
58000
進(jìn)口原裝,現(xiàn)貨熱賣
詢價(jià)
MOT
2023+
CAN4
50000
原裝現(xiàn)貨
詢價(jià)
更多3N120供應(yīng)商 更新時(shí)間2025-1-4 13:30:00