首頁 >2SK3813-AZ>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3813isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=30A) RDS(on)2=7.1mΩMAX.(VGS=4.5V,ID=30A) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFieldEffectTransistor Features LowOn-stateresistance RDS(on)1=5.3m?MAX.(VGS=10V,ID=30A) RDS(on)2=7.1m?MAX.(VGS=4.5V,ID=30A) LowCiss:Ciss=5500pFTYP. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3813isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=30A) RDS(on)2=7.1mΩMAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=5500pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3813isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=30A) RDS(on)2=7.1mΩMAX.(VGS=4.5V,ID=30A) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3813isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=30A) RDS(on)2=7.1mΩMAX.(VGS=4.5V,ID=30A) ?LowCiss:Ciss=5500pF | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
詳細(xì)參數(shù)
- 型號:
2SK3813-AZ
- 功能描述:
MOSFET N-CH 40V MP-3/TO-251
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時(shí)的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEC |
2014+ |
420 |
公司現(xiàn)貨庫存 |
詢價(jià) | |||
RENESAS/瑞薩 |
22+ |
MP-3TO-251 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Renesas Electronics America |
2022+ |
TO-251-3 短引線,IPak,TO-251A |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
NEC |
23+ |
FET-IPAKPBFREE |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
MP-3TO-251 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
NEC |
2339+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | |||
NEC |
24+ |
TO-252 |
8866 |
詢價(jià) | |||
NEC |
23+ |
TO-252 |
7600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | |||
NEC |
23+ |
SOT252 |
9800 |
全新原裝現(xiàn)貨,假一賠十 |
詢價(jià) |
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