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2SK3355-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-Z

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3355

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=9800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3355

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3355-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數(shù)

  • 型號:

    2SK3355-Z

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

供應商型號品牌批號封裝庫存備注價格
NEC
23+
TO-263
35890
詢價
NEC
2339+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
NEC
24+
TO263
15000
原裝正品現(xiàn)貨
詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
詢價
RENESAS/瑞薩
23+
TO-263
10000
公司只做原裝正品
詢價
RENESAS/瑞薩
2022+
TO-263
50000
原廠代理 終端免費提供樣品
詢價
RENESAS/瑞薩
2022+
TO-263
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
詢價
RENESAS
24+
TO-263
35400
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
詢價
NEC
24+
TO-263
36800
詢價
NEC
23+
TO-263
7600
全新原裝現(xiàn)貨
詢價
更多2SK3355-Z供應商 更新時間2024-11-20 16:53:00