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2SK334

Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES

FEATURE ?Becauseithasanultra-compactoutline,setscanbemadecompact.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SK3340-01

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機富士電機株式會社

2SK3341-01

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFuji Electric

富士電機富士電機株式會社

2SK3342

Marking：K3342；Package：SC-64；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

SwitchingRegulatorandDC-DCConverterApplications MotorDriveApplications ●Lowdrain-sourceONresistance:RDS(ON)=0.8?(typ.) ●Highforwardtransferadmittance:|Yfs|=4.5S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=250V) ●Enhancementmode:Vth=1.5to3.5V

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3342

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3348

Silicon N Channel MOS FET High Speed Switching

Features ?Lowon-resistance RDS=1.6?typ.(VGS=4V,ID=50mA) RDS=2.2?typ.(VGS=2.5V,ID=50mA) ?2.5Vgatedrivedevice. ?Smallpackage(CMPAK)

HitachiHitachi Semiconductor

日立日立公司

2SK3348

Silicon N Channel MOS FET High Speed Switching

SiliconNChannelMOSFETHighSpeedSwitching Features ?Lowon-resistance RDS=1.6?typ.(VGS=4V,ID=50mA) RDS=2.2?typ.(VGS=2.5V,ID=50mA) ?2.5Vgatedrivedevice. ?Smallpackage(CMPAK)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3349

Silicon N Channel MOS FET High Speed Switching

Features ?Lowon-resistance RDS=2.8?typ.(atVGS=4V,ID=25mA) RDS=4.8?typ.(atVGS=2.5V,ID=10mA) ?2.5Vgatedrivedevice ?Smallpackage(SMPAK)

HitachiHitachi Semiconductor

日立日立公司

2SK3349

Silicon N Channel MOS FET High Speed Switching

Features ?Lowon-resistance RDS=2.8?typ.(atVGS=4V,ID=25mA) RDS=4.8?typ.(atVGS=2.5V,ID=10mA) ?2.5Vgatedrivedevice ?Smallpackage(SMPAK)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3340N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    2SK334

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES

供應商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價
24+
30000
詢價
HITACHI
23+
SOT-23
31000
全新原裝現(xiàn)貨
 詢價
ON
23+
SOT-23
63000
原裝正品現(xiàn)貨
 詢價
ON/安森美
24+
SOT-23
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
HITACHI
2023+
SOT-23
50000
原裝現(xiàn)貨
 詢價
ON/安森美
23+
SOT-23
50000
原裝正品 支持實單
 詢價
RENESAS/瑞薩
23+
SOT-23
360000
交期準時服務周到
 詢價
TOSHIBA
23+
TO-252
6200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
TOSHIBA
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
更多2SK334供應商 更新時間2025-3-22 10:00:00

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