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2SK3296-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-stateresistance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3296-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3296

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3296

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-stateresistance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3296

MOSFieldEffectTransistor

Features ●4.5Vdriveavailable ●Lowon-stateresistance RDS(on)1=12mΩMAX.(VGS=10V,ID=18A) ●Lowgatecharge QG=30nCTYP.(ID=35A,VDD=16V,VGS=10V) ●Built-ingateprotectiondiode ●Surfacemountdeviceavailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3296-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3296-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-stateresistance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3296-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3296-ZK

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SK3296isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-stateresistance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK3296-S

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

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NEC
23+
T0-262
35890
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NEC
2048+
TO262
9851
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NEC
21+
TO-263
803
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NEC
22+
TO-263
32350
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NEC
23+
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50000
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NEC
22+
TO-263
25000
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NEC
04+
TO-263
803
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NEC
589220
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NEC
2023+
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8800
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NEC
2339+
4326
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更多2SK3296-S供應(yīng)商 更新時(shí)間2024-11-20 16:33:00

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