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2SK3230

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The2SK3230issuitableforconverterofECM. FEATURES ?Compactpackage ?Highforwardtransferadmittance 1000μSTYP.(IDSS=100μA) 1600μSTYP.(IDSS=200μA) ?IncludesdiodeandhighresistanceatG-S

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3230

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230issuitableforconverterofECM. FEATURES ?Compactpackage ?Highforwardtransferadmittance 1000μSTYP.(IDSS=100μA) 1600μSTYP.(IDSS=200μA) ?Includesdiodeandhigh

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3230B

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The2SK3230BissuitableforconverterofECM.General-purposeproduct. FEATURES ?Lownoise: ?108.5dBTYP.(VDD=2.0V,C=5pF,RL=2.2k?) ?Especiallysuitableforaudioandtelephone ?Smallpackage:SC-89(TUSM)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3230B

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230BissuitableforconverterofECM. General-purposeproduct. FEATURES ?Lownoise: ?108.5dBTYP.(VDD=2.0V,C=5pF,RL=2.2kΩ) ?Especiallysuitableforaudioandtelephone

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3230C

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNELSILICONJUNCTIONFIELDEFFECTTRANSISTOR FORIMPEDANCECONVERTEROFECM DESCRIPTION The2SK3230Ccontainsadiodeandhighresistivity betweenitsgatesandsources,forachievingshortstability timeduringpower-on.Inaddition,becauseofitscompact packageandlownoise,the

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3233

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

HitachiHitachi Semiconductor

日立日立公司

2SK3233

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3233-E

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=1.1?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=15nstyp(atVGS=10V,VDD=250V,ID=2.5A) ?Lowgatecharge:Qg=15nCtyp(atVDD=400V,VGS=10V,ID=5A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3234

2SK3234

Features ?Lowon-resistance:RDS(on)=0.65Ωtyp. ?Lowdrainblockingcurrent:IDSS=1μAmax(atVDS=500V) ?Fastswitchingspeed:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) ?Lowinputdynamiccapacity(Qg):Qg=25nCtyp(VDD=400V,VGS=10V,ID=8A) ?AvalancheW

HitachiHitachi Semiconductor

日立日立公司

2SK3234

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=0.65?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) ?Lowgatecharge:Qg=25nCtyp(atVDD=400V,VGS=10V,ID=8A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3234-E

Silicon N Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance:RDS(on)=0.65?typ. ?Lowleakagecurrent:IDSS=1μAmax(atVDS=500V) ?Highspeedswitching:tf=25nstyp(atVGS=10V,VDD=250V,ID=4A) ?Lowgatecharge:Qg=25nCtyp(atVDD=400V,VGS=10V,ID=8A) ?Avalancheratings

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3236

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

SwitchingRegulatorApplications,DC-DCConverterandMotorDriveApplications 1.4-Vgatedrive 2.Lowdrain-sourceONresistance:RDS(ON)=13.5m?(typ.) 3.Highforwardtransferadmittance:|Yfs|=42S(typ.) 4.Lowleakagecurrent:IDSS=100μA(max)(VDS=60V) 5.Enhanc

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3239L-E

Silicon N Channel MOS FET

Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?2.5Vgatedrivedevicecanbedrivenfrom3Vsource ?SuitableforSwitchingregulator,DC-DCconverter Application Highspeedpowerswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3239STL-E

Silicon N Channel MOS FET

Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?2.5Vgatedrivedevicecanbedrivenfrom3Vsource ?SuitableforSwitchingregulator,DC-DCconverter Application Highspeedpowerswitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3230C

JUNCTION FIELD EFFECT TRANSISTOR

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3233

N-Channel 650 V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

2SK3233

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3234

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3235

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3235

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    2SK323

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
SOT523
30000000
原裝進(jìn)口中國百強(qiáng)元器件分銷企業(yè) 專注RENESAS十年 公司大量RENESAS現(xiàn)貨 歡迎您的咨詢 百年不變 服務(wù)至上
 詢價
NEC
24+
SOT-523
366000
新進(jìn)庫存/原裝
 詢價
NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
NEC
23+
SOT-523
30000
原裝正品,假一罰十
 詢價
NEC
09+
SOT-523
6000
絕對原裝自己現(xiàn)貨
 詢價
NEC
24+
SOT523
98000
原裝現(xiàn)貨假一罰十
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
NEC
1922+
SOT-523
35689
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
NEC
23+
SOT-523SC-75USM
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
2022
SOT-523SC-75USM
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多2SK323供應(yīng)商 更新時間2024-11-20 13:50:00

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