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2SK3056

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3056-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3056isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?LowOn-stateResistance RDS(on)1=34mΩMAX.(VGS=10V,ID=16A) RDS(on)2=50mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3056-ZJ

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?LowOn-StateResistance RDS(on)1=34m?MAX.(VGS=10V,ID=16A) RDS(on)2=50m?MAX.(VGS=4.0V,ID=16A) ?LowCiss:Ciss=920pFTYP. ?Built

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK3056

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
17+
TO-220
6200
詢價(jià)
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
NEC
23+
TO-220
35890
詢價(jià)
NEC
23+
TO-220
15000
專做原裝正品,假一罰百!
 詢價(jià)
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
NEC
2447
TO-220
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
NEC
22+
TO-220
6000
十年配單,只做原裝
 詢價(jià)
NEC
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
NEC
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
NEC
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
更多2SK3056供應(yīng)商 更新時(shí)間2025-3-20 16:00:00

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