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2SK259

Fast Switching Speed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK2590

Silicon N-Channel MOS FET

Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?NoSecondaryBreakdown ?SuitableforSwitchingregulator,DC-DCconverter,MotorControl Application Highspeedpowerswitching

HitachiHitachi Semiconductor

日立日立公司

2SK2590

Silicon N Channel MOS FET

Application Highspeedpowerswitching Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?NoSecondaryBreakdown ?SuitableforSwitchingregulator,DC-DCconverter,MotorControl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2590

Fast Switching Speed

DESCRIPTION ?DrainCurrentID=7A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?FastSwitchingSpeed APPLICATIONS ?SwitchingRegulators ?DC-DCConverter, ?MotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK2590-E

Silicon N Channel MOS FET

Application Highspeedpowerswitching Features ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?NoSecondaryBreakdown ?SuitableforSwitchingregulator,DC-DCconverter,MotorControl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2593

Silicon N-Channel Junction FET

Forlow-frequencyamplification Forswitching ■Features ●Lownoies,highgain ●HighgatetodrainvoltageVGDO ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

PanasonicPanasonic Corporation

松下松下電器

2SK2595

Silicon N-Channel MOS FET UHF Power Amplifier

Features ·Highpoweroutput,Highgain,Highefficiency PG=7.8dB,Pout=37.3dBm,hD=50min.(f=836.5MHz) ·Compactpackagecapableofsurfacemounting

HitachiHitachi Semiconductor

日立日立公司

2SK2595

Silicon N-Channel MOS FET UHF Power Amplifier

Features ?Highpoweroutput,Highgain,Highefficiency PG=7.8dB,Pout=5.37W,ηD=50min.(f=836.5MHz) ?Compactpackagecapableofsurfacemounting

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2596

Silicon N-Channel MOS FET UHF Power Amplifier

Features ?Highpoweroutput,Highgain,Highefficiency PG=12.2dB,Pout=1.05W,ηD=45min.(f=836.5MHz) ?Compactpackagecapableofsurfacemounting

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2596BX

Silicon N-Channel MOS FET UHF Power Amplifier

Features ?Highpoweroutput,Highgain,Highefficiency PG=12.2dB,Pout=1.05W,ηD=45min.(f=836.5MHz) ?Compactpackagecapableofsurfacemounting

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2597

N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK2597

SILICON POWER MOS FIELD EFFECT TRANSISTOR

N-CHANNELSILICONPOWERMOSFET FORBASESTATIONOF900MHzBANDCELLULARPHONE POWERAMPLIFICATION FEATURES ?Highoutput,highgain PO=100W,GL=13dB(TYP.)(f=900MHz) PO=90W,GL=12dB(TYP.)(f=960MHz) ?Lowintermodulationdistortion ?Coversallbasestationfrequenci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2598

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

ChopperRegulator,DC?DCConverterandMotorDriveApplications ?Lowdrain?sourceONresistance:RDS(ON)=0.18?(typ.) ?Highforwardtransferadmittance:|Yfs|=13S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=250V) ?Enhancementmode:Vth=1.5to3.5V(VDS

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK2598

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK2599

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK2591

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK2592

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK2596

Silicon N-Channel MOS FET UHF Power Amplifier

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2596_07

Silicon N-Channel MOS FET UHF Power Amplifier

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK2596BXTL-E

Silicon N-Channel MOS FET UHF Power Amplifier

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    2SK259

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
2023+
SMD
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
24+
2000
詢價
NEC
23+
TO-62
1200
專營高頻管模塊,全新原裝!
 詢價
NEC
2022
TO-62
48
原廠原裝正品,價格超越代理
 詢價
HITACHI
17+
TO-220
6200
詢價
TOSHIBA
2339+
TPS
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
PANASONIC
23+
MINI-3
7750
全新原裝優(yōu)勢
 詢價
NEC
23+
高頻管
1000
原裝正品,假一罰十
 詢價
PANASONIC
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
更多2SK259供應(yīng)商 更新時間2024-11-19 17:00:00

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