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首頁 >2SK25>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2SK2503	文件：43.14 Kbytes Page：1 Pages	Silicon N-Channel MOSFET Features ●Lowon-resistance. ●Fastswitchingspeed. ●WideSOA(safeoperatingarea). ●Easilydesigneddrivecircuits. ●Easytoparallel.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
2SK2503	文件：135.78 Kbytes Page：4 Pages	Small switching (60V, 5A) Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm 羅姆羅姆半導(dǎo)體集團	ROHM
2SK2504	文件：43.25 Kbytes Page：1 Pages	Silicon N-Channel MOSFET Features ●Lowon-resistance. ●Fastswitchingspeed. ●WideSOA(safeoperatingarea). ●Easilydesigneddrivecircuits. ●Easytoparallel.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
2SK2504	文件：95.66 Kbytes Page：6 Pages	4V Drive Nch MOS FET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm 羅姆羅姆半導(dǎo)體集團	ROHM
2SK2504	文件：134.2 Kbytes Page：4 Pages	Small switching (100V, 5A) Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm 羅姆羅姆半導(dǎo)體集團	ROHM
2SK2504TL	文件：95.66 Kbytes Page：6 Pages	4V Drive Nch MOS FET Features 1)LowOn-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)4Vdrive. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. Applications Switching	ROHMRohm 羅姆羅姆半導(dǎo)體集團	ROHM
2SK2507	文件：425.45 Kbytes Page：6 Pages	Chopper Regulator, DC??C Converter and Motor Drive Applications ChopperRegulator,DC?DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain?sourceONresistance:RDS(ON)=0.034?(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SK2507	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SK2507	文件：292.55 Kbytes Page：5 Pages	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) ChopperRegulator,DC?DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain?sourceONresistance:RDS(ON)=0.034?(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SK2507F	文件：425.45 Kbytes Page：6 Pages	Chopper Regulator, DC??C Converter and Motor Drive Applications ChopperRegulator,DC?DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain?sourceONresistance:RDS(ON)=0.034?(typ.) ●Highforwardtransferadmittance:\|Yfs\|=16S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=50V) ●Enhancementmode:Vth=0.8to2.0	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SK2508	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SK2510	文件：81.98 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
2SK2510	文件：224.99 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2510isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?SuperLowOn-Resistance RDS(on)1=20mW(VGS=10V,ID=20A) RDS(on)2=30mW(VGS=4V,ID=20A) ?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SK2511	文件：116.23 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
2SK2511	文件：315.99 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2511isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowon-stateresistance RDS(on)1=27mΩMAX.(VGS=10V,ID=20A) RDS(on)2=40mΩMAX.(VGS=4V,ID=20A) ?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SK2512	文件：82.26 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
2SK2512	文件：225.25 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2512isN-ChannelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?LowOn-Resistance RDS(on)1=15mW(VGS=10V,ID=23A) RDS(on)2=23mW(VGS=4V,ID=23A) ?LowCi	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SK2514	文件：114.63 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC
2SK2514	文件：272.33 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2514isN-ChannelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?SuperLowon-stateresistance RDS(on)1≤15mΩMAX.(VGS=10V,ID=25A) RDS(on)2≤23mΩMAX.(VGS=4V,ID=25A) ?	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SK2515	文件：120.86 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社	NEC

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詳細(xì)參數(shù)

型號：
2SK25
制造商：
KEXIN
制造商全稱：
Guangdong Kexin Industrial Co.,Ltd
功能描述：
Silicon N-Channel MOSFET

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市坤融電子科技有限公司	2SK2503	ROHM/羅姆	24+	TO-252	30240	只做原廠渠道可追溯貨源	詢價
中科航電（深圳）電子集團有限公司	2SK2503	ROHM/羅姆	24+	TO252	7906200	一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系	詢價
深圳市匯萊威科技有限公司	2SK2503	ROHM/羅姆	2024	TO-252	505348	16余年資質(zhì) 絕對原盒原盤代理渠道更多數(shù)量	詢價
深圳市一線半導(dǎo)體有限公司	2SK2503	ROHM	24+	TO-252	8700	新進(jìn)庫存/原裝	詢價
深圳市弘為電子有限公司	2SK2503	ROHM	16+	TO252	2230	原裝現(xiàn)貨假一罰十	詢價
深圳市益百分電子有限公司	2SK2503	ROHM	01+	SOT252	2900	全新原裝進(jìn)口自己庫存優(yōu)勢	詢價
深圳市昌和盛利電子有限公司	2SK2503	ROHM	23+	D-PAK	12335		詢價
深圳市博浩通科技有限公司	2SK2503	羅姆	23+	TO-252	6000	專業(yè)優(yōu)勢供應(yīng)	詢價
上海專毅電子科技有限公司	2SK2503	ROHM	17+	TO263	9988	只做原裝進(jìn)口,自己庫存	詢價
深圳市永貝爾科技有限公司	2SK2503	KEXIN	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費送樣	詢價

更多2SK25供應(yīng)商更新時間2024-11-20 11:04:00

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