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2SJ603

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=48mMAX.(VGS=-10V,ID=-13A) RDS(on)2=75mMAX.(VGS=-4.0V,ID=-13A) ●LowCiss:Ciss=1900pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ603

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ603-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ603-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=?10V,ID=?13A) RDS(on)2=75mΩMAX.(VGS=?4.0V,ID=?13A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ603-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-25A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ603-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Superlowon-stateresistance: RDS(on)1=48m?MAX.(VGS=?10V,ID=?13A) RDS(on)2=75m?MAX.(VGS=?4.0V,ID=?13A) ?Lowinputcapacitance: Ciss=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

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更多2SJ603IC供應(yīng)商 更新時(shí)間2025-1-28 15:18:00

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