首頁 >2SJ552>規(guī)格書列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

2SJ552

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552L

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SJ552L-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552S

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552S

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552(L)_15

Silicon P Channel MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ552

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Silicon P Channel MOS FET High Speed Power Switching

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HITACHI/日立
2024
TO-262
500205
16余年資質(zhì) 絕對(duì)原盒原盤代理渠道 更多數(shù)量
 詢價(jià)
HIT
24+
TO-251
20000
詢價(jià)
HIT
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
HIT
21+
TO-262
1250
原裝現(xiàn)貨假一賠十
 詢價(jià)
RENESAS/瑞薩
25
TO-263-2
106
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
RENESAS/瑞薩
23+
TO-263-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RENESAS/瑞薩
2022
TO-263-2
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
RENESAS
22+
TO-263-2
6000
十年配單,只做原裝
 詢價(jià)
HITACHI/日立
23+
220
63881
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳
 詢價(jià)
HIT
06+
TO-262
1250
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多2SJ552供應(yīng)商 更新時(shí)間2025-3-18 15:14:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多